| 摘要 |
PURPOSE: A chemical vapor deposition apparatus and a temperature control method thereof are provided to accurately control temperature inside a chamber by precisely measuring temperature distribution of the upper surface of a susceptor. CONSTITUTION: A gas supply unit(30) sprays gas toward a wafer by being arranged inside a chamber. Temperature sensors(20a, 20b) measure temperature of a susceptor by being arranged on the chamber. A rotation indicator(61a) is arranged on a position which rotates together with the susceptor. A rotation indication sensor(62a) detects the rotation indicator by being arranged on the chamber. A controller calculates temperature distribution of the upper surface of the susceptor using the rotation indication sensor and the temperature sensor and controls the heater based on the temperature distribution. |
