发明名称 |
INDIUM ZINC OXIDE TRANSPARENT CONDUTIVE LAYER FOR AN ELECTRODE AND THE PREPARING METHOD THEREOF |
摘要 |
PURPOSE: An IZO(Indium Zinc Oxide) transparent conductive film and a manufacturing method thereof are provided to obtain a thin film with enhanced etching properties and to obtain an amorphous or nano crystalline thin film at low temperatures. CONSTITUTION: An IZO transparent conductive film comprises indium oxide, zinc oxide, and titanium oxide. The IZO transparent conductive film is formed from an IZO sputtering target expressed as the following formula, InxZny(TiO2-a)z, where x+y<=1, 0.0001<=z<0.002, x:y=8.5-9.5:1.5-0.5, and 0.5<=a<=1.
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申请公布号 |
KR20120062341(A) |
申请公布日期 |
2012.06.14 |
申请号 |
KR20100123561 |
申请日期 |
2010.12.06 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHUNG, SUNG MOOK;CHEONG, WOO SEOK;HWANG, CHI SUN;PARK, SANG HEE;CHO, KYOUNG IK |
分类号 |
C23C14/08;C23C14/34 |
主分类号 |
C23C14/08 |
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