| 摘要 |
<p>In a liquid crystal display device of IPS mode with a smaller number of layers, a gate electrode (101) is formed on a TFT substrate (100). A gate insulating film (102) is formed to cover the gate electrode, on which a semiconductor layer (103) is formed. A drain electrode (104) and a source electrode (105) are placed on the semiconductor layer. A planar pixel electrode (106) is formed from ITO on the gate insulating film (102) prior to the formation of the drain electrode (104), source electrode (105), image signal line (20), and the like. This process is performed to prevent the image signal line (20), the drain electrode (104), the source electrode (105), and the like, from being consumed by the cell reaction through a developer (300) during the patterning of the ITO when a pin hole is present in the ITO, in order not to cause disconnection. As a result, it is possible to improve the production yield and achieve high reliability.
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