发明名称 PROGRAMMING MEMORY WITH REDUCED PASS VOLTAGE DISTURB AND FLOATING GATE TO-CONTROL GATE LEAKAGE
摘要 <p>Program disturb is reduced in a non-volatile storage system by programming storage elements on a selected word line WLn in separate groups, according to the state of their WLn−1 neighbor storage element, and applying an optimal pass voltage to WLn−1 for each group. Initially, the states of the storage elements on WLn−1 are read. A program iteration includes multiple program pulses. A first program pulse is applied to WLn while a first pass voltage is applied to WLn−1, a first group of WLn storage elements is selected for programming, and a second group of WLn storage elements is inhibited. Next, a second program pulse is applied to WLn while a second pass voltage is applied to WLn−1, the second first group of WLn storage elements is selected for programming, and the first group of WLn storage elements is inhibited. A group can include one or more data states.</p>
申请公布号 EP2462590(A1) 申请公布日期 2012.06.13
申请号 EP20100742064 申请日期 2010.08.03
申请人 SANDISK TECHNOLOGIES, INC. 发明人 DUTTA, DEEPANSHU;CHIN, HENRY
分类号 G11C11/56;G11C16/04;G11C16/10;G11C16/34 主分类号 G11C11/56
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