Trench gate MOSFET and method of manufacturing the same

摘要

A trench metal-oxide-semiconductor field effect transistor (MOSFET) (100), includes a drain region (150,155), gate regions (125) disposed above the drain region, gate insulator regions (130) each disposed about a periphery of a respective gate region, a plurality of source regions (120) disposed in recessed mesas between gate insulator regions, a plurality of body regions (145) disposed in said recessed mesas between gate insulator regions and between source regions and the drain region. The MOSFET also includes body contact regions (147) each disposed in a respective body region, source/body contact spacers (140) disposed between gate insulator regions above the recessed mesas, a source/body contact (110) disposed above the source/body contact spacers, and source/body contact plugs (115) disposed between the source/body contact spacers and coupling the source/body contact to the body contact regions and the source regions.