| 摘要 |
A bipolar reverse-blocking non-punch-through power semiconductor device with a blocking voltage of at least 1000 V is provided. It comprises a semiconductor wafer (2) with an inner region (22) and a termination region (24), which surrounds the inner region (22). A cathode contact (3) is arranged on a cathode side (31) and a anode contact (4) on an anode side (41). The wafer (2) comprises a drift layer (26) of a first conductivity type, a base layer of a second conductivity type on the drift layer (26), which is arranged towards the cathode side (31) and an anode layer of the second conductivity type, which is arranged towards the anode side (41). First guard rings (9) of the second conductivity type are arranged on the cathode side (31) in the termination region (24). On the anode side (41) in the termination region (24) second guard rings (95) of the second conductivity type are arranged. The first and second guard rings (9, 95) are fully floating. The base layer and the anode layer have both a thickness (52, 62) of at most 40 µm.
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