发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: A semiconductor device is provided to maintain information for a long time by using semiconductor materials which reduce an off current of a transistor. CONSTITUTION: A first transistor(160) includes a first gate electrode, a first source electrode, a first drain electrode, and a first channel forming region. A second transistor(162) includes a second gate electrode, a second source electrode, a second drain electrode, and a second channel forming region. The materials of the first channel forming region are different from the materials of the second channel forming region. A third transistor includes a third gate electrode, a third source electrode, a third drain electrode, and a third channel forming region. An input terminal of a clocked inverter(326) is electrically connected to a first source electrode or a first drain electrode.
申请公布号 KR20120061058(A) 申请公布日期 2012.06.12
申请号 KR20110078181 申请日期 2011.08.05
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NAGATSUKA SHUHEI;MATSUZAKI TAKANORI
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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