| 摘要 |
<p>A method for forming capacitor of the semiconductor device is provided, which prevents crack generation at the metal layer for the storage node by reducing the thickness of the metal layer for the storage node. The mold dielectric film(108) in which a hole is equipped at the upper part of the semiconductor substrate(100) is formed. The first metal layer(112) for the storage node is formed on the mold dielectric film including the hole surface. The insulating layer(114) is formed so that the entrance of hole can be blocked on the first metal layer for the storage node. The insulating layer of the hole top and mold dielectric film top completely removes the mold dielectric film top. The second metal layer for the storage node is reclaimed to the upper portion of the hole in which the insulating layer is removed and the storage node is formed. The mold dielectric film is removed.</p> |
