发明名称 |
Method for manufacturing semiconductor device |
摘要 |
Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate. |
申请公布号 |
US8198148(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100766953 |
申请日期 |
2010.04.26 |
申请人 |
KOO JAE BON;KANG SEUNG YOUL;YOU IN-KYU;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KOO JAE BON;KANG SEUNG YOUL;YOU IN-KYU |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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