发明名称 Monolithic multi-channel ESD protection device
摘要 A semiconductor device is described that includes one or more electrostatic discharge (ESD) protection circuits. Each circuit comprises reverse-biased steering diodes connected in series between power rail and signal ground, a bypass Zener diode and a substrate Zener diode. The Zener diodes provide ESD protection and the steering diode cooperate with the substrate Zener diode to provide a bypass function that is substantially symmetric about the signal ground. Noise in the circuit can be shunted using internal and/or external capacitances that can be implemented as Zener diodes.
申请公布号 US8199447(B2) 申请公布日期 2012.06.12
申请号 US20100651902 申请日期 2010.01.04
申请人 GEE HARRY;ZENG WENJIANG;DUNNIHOO JEFFREY C.;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 GEE HARRY;ZENG WENJIANG;DUNNIHOO JEFFREY C.
分类号 H02H9/00 主分类号 H02H9/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利