发明名称 |
Monolithic multi-channel ESD protection device |
摘要 |
A semiconductor device is described that includes one or more electrostatic discharge (ESD) protection circuits. Each circuit comprises reverse-biased steering diodes connected in series between power rail and signal ground, a bypass Zener diode and a substrate Zener diode. The Zener diodes provide ESD protection and the steering diode cooperate with the substrate Zener diode to provide a bypass function that is substantially symmetric about the signal ground. Noise in the circuit can be shunted using internal and/or external capacitances that can be implemented as Zener diodes. |
申请公布号 |
US8199447(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100651902 |
申请日期 |
2010.01.04 |
申请人 |
GEE HARRY;ZENG WENJIANG;DUNNIHOO JEFFREY C.;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
GEE HARRY;ZENG WENJIANG;DUNNIHOO JEFFREY C. |
分类号 |
H02H9/00 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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