发明名称 |
Magneto-resistance effect element, magnetic head, magnetic recording device and magnetic memory |
摘要 |
A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer. |
申请公布号 |
US8199443(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20080073491 |
申请日期 |
2008.03.06 |
申请人 |
ITO JUNICHI;FUKUZAWA HIDEAKI;YUASA HIROMI;FUJI YOSHIHIRO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITO JUNICHI;FUKUZAWA HIDEAKI;YUASA HIROMI;FUJI YOSHIHIRO |
分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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