发明名称 |
Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature |
摘要 |
A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines. |
申请公布号 |
US8197915(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20090416809 |
申请日期 |
2009.04.01 |
申请人 |
OKA TAKAHIRO;SHIMIZU AKIRA;ASM JAPAN K.K. |
发明人 |
OKA TAKAHIRO;SHIMIZU AKIRA |
分类号 |
H05H1/24;C23C16/00 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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