| 摘要 |
A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors. |
