发明名称 |
Method to maximize nitrogen concentration at the top surface of gate dielectrics |
摘要 |
An integrated circuit having a gate dielectric layer (414, 614, 814) having an improved nitrogen profile and a method of fabrication. The gate dielectric layer is a graded layer with a significantly higher nitrogen concentration at the electrode surface than near the substrate surface. An amorphous silicon layer (406) may be deposited prior to nitridation to retain the nitrogen concentration at the top surface (416). Alternatively, a thin silicon nitride layer (610) may be deposited after anneal or a wet nitridation process may be performed. |
申请公布号 |
US8198184(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20090570620 |
申请日期 |
2009.09.30 |
申请人 |
CHAMBERS JAMES JOSEPH;NIIMI HIROAKI;COLOMBO LUIGI;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHAMBERS JAMES JOSEPH;NIIMI HIROAKI;COLOMBO LUIGI |
分类号 |
H01L29/78;H01L21/314;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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