| 摘要 |
A method for manufacturing a semiconductor device is provided. A semiconductor substrate is etched to form a trench, a gate electrode is buried in the trench, an etch-back process thereon is performed to form a buried gate, and an insulating layer is formed at the entire surface with the trench. Subsequently, an ion implantation process with respect to the entire surface with the insulting layer is carried out, the dose amount in ion-implanted in the insulating layer of an upper portion of the semiconductor substrate is more than that of a sidewall in the trench. Therefore, when an etch process is performed to form a contact during a subsequent procedure, the short between the buried gate and the contact may be prevented using a difference between an etch rate of the insulating layer. |
