发明名称 YTTRIA SINTER AND MEMBER FOR PLASMA PROCESSOR
摘要 <p>To provide a high purity Yttria sintered bodies having a high strength, a low dielectric loss and high plasma corrosion resistance of halogen gas during wide range surface roughness (Ra). An Yttria sintered body having a dielectric loss tan &delta; of 1×10&minus;4 or less in the frequency range from 1 to 20 GHz, wherein the Yttria sintered body contains Yttria of 99.9% by mass or more, has a porosity of 1% or less and an average crystal grain size of 3 &mu;m or less, and the cumulative frequency ratio calculated from the following formula (1) is 3 or less: Cumulative frequency ratio=D90/D50. In the above-described formula (1), the meanings of the individual symbols are as follows: D90: The crystal grain size (&mu;m) at which the cumulative number of grains as calculated from the smaller grain size side is 90% in the grain size distribution of the crystal grains in terms of the number of grains. D50: The crystal grain size (&mu;m) at which the cumulative number of grains as calculated from the smaller grain size side is 50% in the grain size distribution of the crystal grains in terms of the number of grains.</p>
申请公布号 KR101155799(B1) 申请公布日期 2012.06.12
申请号 KR20107024538 申请日期 2008.10.08
申请人 发明人
分类号 C04B35/505;C04B35/50 主分类号 C04B35/505
代理机构 代理人
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