Method for programming nonvolatile memory device

摘要

PURPOSE: A method for programming a nonvolatile memory device is provided to improve a threshold voltage distribution margin of a memory cell by decreasing a threshold voltage distribution width. CONSTITUTION: A bit line potential of a memory cell block is set(S410). It is checked whether memory cells of a selected page is programmed over a target threshold voltage value(S430). If a program operation is failed, the number of memory cells where the program passes is counted(S440). It is determined whether the counted number of pass bits is larger or smaller than the number of pass allowable bits(S450). If the number of pass bits is smaller than or equal to the pass allowable number, a program operation is executed by increasing a program voltage(S460).