| 发明名称 |
Ion implanted substrate having capping layer and method |
| 摘要 |
In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising dispersed gas pockets is deposited on the ion implanted region. |
| 申请公布号 |
US8198180(B2) |
申请公布日期 |
2012.06.12 |
| 申请号 |
US20100974653 |
申请日期 |
2010.12.21 |
| 申请人 |
DEL AGUA BORNIQUEL JOSE IGNACIO;POON TZE;SCHREUTELKAMP ROBERT;FOAD MAJEED;APPLIED MATERIALS, INC. |
发明人 |
DEL AGUA BORNIQUEL JOSE IGNACIO;POON TZE;SCHREUTELKAMP ROBERT;FOAD MAJEED |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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