Method of manufacturing solid-state imaging device

摘要

A method of manufacturing a solid-state imaging device. Light-receiving sensor portions each constituting a pixel in the form of a matrix is arranged. The matrix has columns aligned in a vertical direction and rows aligned in a horizontal direction. Charge-transfer portions are formed on either side of the columns of said pixels. Transfer electrodes in said charge-transfer portions are formed to include a first transfer electrode formed of a first electrode layer and a second transfer electrode formed by electrically connecting the first electrode layer and a second electrode layer through a contact. The second transfer electrode being disposed in the vertical direction above the charge-transfer portion in a vicinity of the contact to decrease the width of the charge-transfer portions in the horizontal direction and increase the light receiving sensor portions in the vertical direction.