NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

PURPOSE: A nonvolatile memory device and an operating method thereof are provided to improve reliability by reducing a leakage current of a cell string in which a program is prohibited. CONSTITUTION: A plurality of doped regions(311-313) are formed on a substrate(111). A plurality of pillars(PL11,PL21) comprise a channel layer(114) and inner materials(115). Conductive materials(CM1-CM8) and insulation materials(112,112a) are cut on the doped region by a word line cut. A plurality of drains(320) are formed on the pillars. The plurality of drains are connected to a bit line(BL1).