| 摘要 |
<p>A magnetic tunnel junction (MTJ) device for a magnetic random access memory (MRAM) includes a first conductive interconnect communicating with at least one control device and a first electrode coupling to the first conductive interconnect through a via opening formed in a dielectric passivation barrier using a first mask. The device has an MTJ stack for storing data, coupled to the first electrode. A portion of the MTJ stack has lateral dimensions based upon a second mask. The portion defined by the second mask is over the contact via. A second electrode is coupled to the MTJ stack and also has a lateral dimension defined by the second mask. The first electrode and a portion of the MTJ stack are defined by a third mask. A second conductive interconnect is coupled to the second electrode and at least one other control device.</p> |
