发明名称 |
Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization |
摘要 |
Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors. |
申请公布号 |
US8198192(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100775555 |
申请日期 |
2010.05.07 |
申请人 |
CARTER RICHARD;TRENTZSCH MARTIN;BEYER SVEN;PAL ROHIT;GLOBALFOUNDRIES INC. |
发明人 |
CARTER RICHARD;TRENTZSCH MARTIN;BEYER SVEN;PAL ROHIT |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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