| 摘要 |
A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region. |
