发明名称 |
Deposit morphology of electroplated copper |
摘要 |
The present invention provides improved methods and devices for electroplating copper on a wafer. Some implementations of the present invention involve the pre-treatment of the wafer with a solution containing accelerator molecules. Preferably, the bath into which the wafer is subsequently placed for electroplating has a reduced concentration of accelerator molecules. The pre-treatment causes a reduction in roughness of the electroplated copper surface, particularly during the initial phases of copper growth. |
申请公布号 |
US8197662(B1) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100971367 |
申请日期 |
2010.12.17 |
申请人 |
WEBB ERIC;REID JONATHAN D.;TAKADA YUICHI;ARCHER TIMOTHY;NOVELLUS SYSTEMS, INC. |
发明人 |
WEBB ERIC;REID JONATHAN D.;TAKADA YUICHI;ARCHER TIMOTHY |
分类号 |
C25D5/34 |
主分类号 |
C25D5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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