发明名称 Deposit morphology of electroplated copper
摘要 The present invention provides improved methods and devices for electroplating copper on a wafer. Some implementations of the present invention involve the pre-treatment of the wafer with a solution containing accelerator molecules. Preferably, the bath into which the wafer is subsequently placed for electroplating has a reduced concentration of accelerator molecules. The pre-treatment causes a reduction in roughness of the electroplated copper surface, particularly during the initial phases of copper growth.
申请公布号 US8197662(B1) 申请公布日期 2012.06.12
申请号 US20100971367 申请日期 2010.12.17
申请人 WEBB ERIC;REID JONATHAN D.;TAKADA YUICHI;ARCHER TIMOTHY;NOVELLUS SYSTEMS, INC. 发明人 WEBB ERIC;REID JONATHAN D.;TAKADA YUICHI;ARCHER TIMOTHY
分类号 C25D5/34 主分类号 C25D5/34
代理机构 代理人
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