OXIDE LAYER ETCHANT AND ETCHING METHOD OF OXIDE LAYER USING THE SAME

摘要

PURPOSE: Oxide layer etchant and an etching method of an oxide layer using the same are provided to prevent etching control according to excessively high etching rate and undercut resulting from etching resistances. CONSTITUTION: Oxide layer etchant comprises inorganic acid of 10-60weight% and organic acid of 40-90weight%. The inorganic acid is one or more selected from the group consisting of BOE(buffered oxide etchant), HF, HCl, and H2SO4. The organic acid is one or more selected from the group consisting of formic acid and oxalic acid. The etchant is used at the room temperature, and the inorganic and organic acid are stirred at the time of use.