| 摘要 |
The SRAM cell is formed by an inverter circuit (P1, N1) using a storage node V2 as an input and a storage node V1 as an output, a load transistor P2 connected between a power source VDD and the storage node V2 using the storage node V1 as an input and the storage node V2 as an output, an access transistor N3 connected between a read bit line RBL and the storage node V1, and an access transistor N4 connected between a write bit line WBL and the storage node V2. When the access transistor N4 is controlled by a write word line WWL, the access transistor N4 can be used as holding control means and writing means for the memory cell, making it possible to obtain a semiconductor device capable of operating at a high speed with a small number of elements. |
