发明名称 Non-volatile memory with both single and multiple level cells
摘要 Memory arrays and methods of operating such memory arrays are described as having a memory cell operated as a single level cell interposed between and coupled to a select gate and a memory cell operated as a multiple level memory cell. In some embodiments, a memory array is described as including a number of select gates coupled in series to a number of memory cells operated as single level memory cells and a number of memory cells operated as multiple level memory cells, where a first select gate is directly coupled to a first memory cell operated as a single level memory cell interposed between and coupled to the first select gate and a continuous number of memory cells operated as multiple level memory cells.
申请公布号 US8199572(B2) 申请公布日期 2012.06.12
申请号 US201113186172 申请日期 2011.07.19
申请人 ARITOME SEIICHI;MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 G11C11/34 主分类号 G11C11/34
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