发明名称 |
Memory cell with enhanced read and write sense margins |
摘要 |
An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell. |
申请公布号 |
US8199562(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100961240 |
申请日期 |
2010.12.06 |
申请人 |
ZHU WENZHONG;LI HAI;CHEN YIRAN;WANG XIAOBIN;HUANG HENRY;XI HAIWEN;SEAGATE TECHNOLOGY LLC |
发明人 |
ZHU WENZHONG;LI HAI;CHEN YIRAN;WANG XIAOBIN;HUANG HENRY;XI HAIWEN |
分类号 |
G11C11/00;G11C11/14 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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