| 摘要 |
PURPOSE: A heating treatment apparatus is provided to suppress the metal contamination of the lower-part of the silicon substrate by silicon cover. CONSTITUTION: The heating treatment apparatus heat-treats the silicon substrate. The heating treatment apparatus includes the main chuck(23), and the cover(35). The main chuck heats the silicon substrate(W). The cover is formed in the upper side of the main chuck. The cover is made of one among silicon, SiC, and aluminum-nitride. The cover is the disc shape. The cover has the diameter which is bigger than the silicon substrate of the disc shape mounted on the main chuck.
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