发明名称 Intermediate structure of semiconductor device and method of manufacturing the same
摘要 An intermediate structure for semiconductor devices includes a wiring board, a plurality of semiconductor chips mounted on the wiring board, and a sealing body for collectively sealing the plurality of semiconductor chips and having a region with a different thickness.
申请公布号 US8198141(B2) 申请公布日期 2012.06.12
申请号 US20090636959 申请日期 2009.12.14
申请人 ITO YOUKOU;OHBA TAKASHI;ELPIDA MEMORY, INC. 发明人 ITO YOUKOU;OHBA TAKASHI
分类号 H01L21/50;H01L21/44;H01L21/48 主分类号 H01L21/50
代理机构 代理人
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