| 摘要 |
A nonvolatile semiconductor memory device includes: a plurality of memory cell arrays stacked on a semiconductor substrate and including a plurality of first wires, a plurality of second wires and memory cells disposed at intersections of the first wires and the second wires and having a rectifier element and a variable resistive element are connected in series; and a control circuit configured to selectively drive the first wires and the second wires. The control circuit executes a resetting operation to change a state of the variable resistive element from a low resistance state to a high resistance state. At a time of executing the resetting operation, the control circuit increases a pulse voltage to be applied to the variable resistive element to a first voltage, and then decreases the pulse voltage to a second voltage lower than the first voltage and higher than the ground voltage. |
