发明名称 |
Methods of fabricating normally-off semiconductor devices |
摘要 |
Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein. |
申请公布号 |
US8198178(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US201113175069 |
申请日期 |
2011.07.01 |
申请人 |
HEIKMAN STEN;WU YIFENG;CREE, INC. |
发明人 |
HEIKMAN STEN;WU YIFENG |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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