发明名称 |
Methods of forming non-volatile memory devices including dummy word lines |
摘要 |
A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a first memory cell string on the active region, and a second memory cell string on the active region. The first memory cell string may include a first plurality of word lines crossing the active region between a first ground select line and a first string select line, and about a same first spacing may be provided between adjacent ones of the first plurality of word lines. The second memory cell string may include a second plurality of word lines crossing the active region between a second ground select line and a second string select line, and about the same first spacing may be provided between adjacent ones of the second plurality of word lines. Related methods are also discussed. |
申请公布号 |
US8198157(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US201113236913 |
申请日期 |
2011.09.20 |
申请人 |
SEL JONG-SUN;CHOI JUNG-DAL;PARK YOUNG-WOO;PARK JIN-TAEK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEL JONG-SUN;CHOI JUNG-DAL;PARK YOUNG-WOO;PARK JIN-TAEK |
分类号 |
H01L21/82;H01L21/336;H01L21/44;H01L21/4763 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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