发明名称 Method of forming a semiconductor die with aluminum-spiked heat pipes
摘要 A low thermal pathway is provided from the top surface of a silicon substrate to the bottom surface of the silicon substrate by first forming aluminum plugs in the bottom surface of the silicon substrate that contact the silicon substrate and extend up towards the top surface, and then heating the aluminum plugs to a temperature for a period of time sufficient to cause spikes to grow from the sides of the aluminum plugs.
申请公布号 US8198150(B1) 申请公布日期 2012.06.12
申请号 US20090630382 申请日期 2009.12.03
申请人 YEGNASHANKARAN VISVAMOHAN;NATIONAL SEMICONDUCTOR CORPORATION 发明人 YEGNASHANKARAN VISVAMOHAN
分类号 H01L21/336;H01L21/4763;H01L21/8238 主分类号 H01L21/336
代理机构 代理人
主权项
地址