| 发明名称 |
Memory device that selectively stores holes |
| 摘要 |
A system that incorporates teachings of the present disclosure may include, for example, a memory device having a memory cell to selectively store holes by photon and bias voltage induction as a representation of binary values.
|
| 申请公布号 |
US8199580(B2) |
申请公布日期 |
2012.06.12 |
| 申请号 |
US20090391651 |
申请日期 |
2009.02.24 |
| 申请人 |
LEBURTON JEAN-PIERRE;SOARES DE SOUSA JEANLEX;DE AQUINO FARIAS GIL;NOGUEIRA FREIRE VALDER;THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
发明人 |
LEBURTON JEAN-PIERRE;SOARES DE SOUSA JEANLEX;DE AQUINO FARIAS GIL;NOGUEIRA FREIRE VALDER |
| 分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
