Semiconductor device and method for manufacturing the same

摘要

The semiconductor device 1 comprises a housing 12 which has a recess 24 in the front surface 1; a pair of lead electrodes 20 which have the distal ends 34 exposed in the recess 24, protrude from the external surface of the housing 12, and are bent along the bottom surface 16 of the housing 12; and a semiconductor element 36 which is housed in the recess 24 and is electrically connected to the pair of lead electrodes 20. The housing 12 has grooves 30 which are formed on the pair of side surfaces 18 which adjoin the front surface 14 and the bottom surface 16 on the right and left sides so as to penetrate the housing 12 from the top surface 28 toward the bottom surface 16 of the housing 12. The grooves 30 preferably have width substantially equal to the thickness of the lead electrode 20. The grooves 30 are more preferably formed to be flush with the distal ends 34 of the lead electrode 20.