METHOD FOR FORMING ISOLATION PATTERN OF WAFER USING LASER MARKING AND SYSTEM FOR MEASURING ELECTROLUMINESCENCE THEREOF

摘要

PURPOSE: A method for forming an ISO pattern of a wafer using laser marking technology and a system for measuring an electro-optic property are provided to reduce manufacturing costs of an LED device by measuring the performance and electro-optic property of an LED in an LED epi-wafer step. CONSTITUTION: A laser processing unit(210) forms an ISO pattern on an epi-wafer by using laser marking technology and includes a CO2 laser(211) and a laser scanner. The CO2 laser generates excitation light for laser marking to form an electrode pattern and a hole. A laser scanner control unit(220) controls the system of the laser processing unit. An electro-optic property measuring unit(230) measures an electro-optic property of an epi-wafer by applying a current to the epi-wafer.