| 摘要 |
A method for manufacturing a single crystalline gallium nitride substrate is provided to restrain the propagation of a crack on the single crystalline gallium nitride by using a separation boundary layer. A separation boundary layer(120) is grown on a base substrate(110) by supplying a nitrogen source and a gallium source with 2:1 to 7:1 ratio. A gallium nitride thick layer(130) is grown on the separation boundary layer. A laser is irradiated on a boundary surface between the base substrate and the separation boundary surface to separate the base substrate. A thickness of the separation boundary layer is 10 mum to 30 mum. The nitrogen source is NH3 gas and the gallium source is GaCl gas. The laser irradiates a wavelength range of 345 to 385 nm. A nitriding process is performed on a surface of the base substrate. |
