| 摘要 |
There is disclosed an antireflection film composition used for lithography comprising: at least
a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin;
a first acid generator that is decomposed at a temperature of 200 degrees C or less; and
an organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.
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