THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要
<p>PURPOSE: A thin film transistor display panel and a manufacturing method thereof are provided to form an insulating film which covers a semiconductor layer without an additional mask even though an etching stop film is not formed on the semiconductor layer. CONSTITUTION: A gate electrode(124) is arranged on an insulating substrate. A gate insulating film(140) is arranged on the gate electrode. An oxide semiconductor is arranged on the gate insulating film. Blocking layers(163,164,165) are arranged on the oxide semiconductor. A source electrode and a drain electrode are arranged on the blocking layers. A protective film(180) is arranged on the source electrode and the drain electrode. A pixel electrode is arranged on the protective film.</p>
申请公布号
KR20120059855(A)
申请公布日期
2012.06.11
申请号
KR20100121337
申请日期
2010.12.01
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KHANG, YOON HO;YU, SE HWAN;CHANG, CHONG SUP;PARKK, SANG HO;KANG, SU HYOUNG