Light emitting device and the fabricating method

摘要

PURPOSE: A light emitting device and a manufacturing method thereof are provided to prevent an active layer from being directly irradiated with laser beams which are irradiated on a lower portion of a substrate for separation by forming a level difference on a first semiconductor layer included a single light emitting structure layer. CONSTITUTION: A reflective electrode(120) is located on a conductive support substrate(110). The reflective electrode includes a reflective layer(122) and an electrode layer(124). A light emitting structure layer(140) is located on the reflective electrode. The light emitting structure layer comprises a first semiconductor layer(142), a second semiconductor layer(144), and an active layer(146). An electrode(150) is formed on an upper side of the first semiconductor layer.