| 摘要 |
PURPOSE: A method of forming a via hole is provided to prevent the formation of a notch generated on the bottom of a via hole by forming a concave structure at the beginning of the via hole formation of a through silicon via. CONSTITUTION: An etch stop layer(110) is formed on a rear side of a substrate(100). A photosensitive film layer is formed on the front of the substrate on which the etch stop layer is formed. A mask pattern(120) is formed by patterning the photosensitive film layer. A concave structure(130) is formed by etching an upper side of the substrate. The etch stop layer is an inter-layer insulating film or a metal layer.
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