3-layer Resistive RAM of having self selective characteristics

摘要

PURPOSE: A trilaminar resistance alteration memory having self selection characteristics is provided to efficiently prevent malfunction by blocking a leakage current through a memory cell maintaining a high resistance state. CONSTITUTION: A bottom electrode(110) is formed on a substrate(100). A resistance alteration layer(120) is formed on the bottom electrode. The resistance alteration layer comprises a first oxygen depletion oxide film, a second oxygen depletion oxide film, and a third oxygen depletion oxide film. The resistance alteration layer has state change according to formation and extinction of a conductive channel and self selection characteristics according to the state change. A top electrode(130) is formed at the upper side of the resistance alteration layer.