发明名称 |
Stack structure including quantum dot, method of manufacturing the same and light emitting device using the stack structure |
摘要 |
PURPOSE: A lamination structure, a manufacturing method thereof, and a light emitting device applying the same are provided to increase use efficiency of a quantum dot by easily controlling location and size of the quantum dot. CONSTITUTION: A plurality of holes(H1) is formed at one side of a semiconductor layer(10). An under layer(20) is formed on the upper side of the semiconductor layer. The under layer is conformally included along the upper side of the semiconductor layer. A quantum dot(30) is formed at the bottom of the plurality of holes. A graphene layer(40) covering the quantum dot is formed on the under layer. A planarization layer(50) is formed on the graphene layer. The plurality of holes is filled with the planarization layer. |
申请公布号 |
KR20120059058(A) |
申请公布日期 |
2012.06.08 |
申请号 |
KR20100120664 |
申请日期 |
2010.11.30 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
CHA, NAM GOO;HWANG, SUNG WON;CHUNG, HUN JAE;SONE, CHEOL SOO |
分类号 |
H01L33/04 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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