发明名称 Stack structure including quantum dot, method of manufacturing the same and light emitting device using the stack structure
摘要 PURPOSE: A lamination structure, a manufacturing method thereof, and a light emitting device applying the same are provided to increase use efficiency of a quantum dot by easily controlling location and size of the quantum dot. CONSTITUTION: A plurality of holes(H1) is formed at one side of a semiconductor layer(10). An under layer(20) is formed on the upper side of the semiconductor layer. The under layer is conformally included along the upper side of the semiconductor layer. A quantum dot(30) is formed at the bottom of the plurality of holes. A graphene layer(40) covering the quantum dot is formed on the under layer. A planarization layer(50) is formed on the graphene layer. The plurality of holes is filled with the planarization layer.
申请公布号 KR20120059058(A) 申请公布日期 2012.06.08
申请号 KR20100120664 申请日期 2010.11.30
申请人 SAMSUNG LED CO., LTD. 发明人 CHA, NAM GOO;HWANG, SUNG WON;CHUNG, HUN JAE;SONE, CHEOL SOO
分类号 H01L33/04 主分类号 H01L33/04
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