| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask blank capable of suitably applying EB defect correction and also thinning a light-shielding film. <P>SOLUTION: A mask blank 10 is used to make a transfer mask applied with ArF exposure light and has a light-shielding film 2 on a translucent substrate 1, where the light-shielding film 2 has, as a main component, a material containing at least one or more elements selected from a transition metal, silicon, oxygen and nitrogen. This light-shielding film has an etching rate of 0.3 nm/sec or less in such a state that a substance containing fluorine is not irradiated with charged particles. <P>COPYRIGHT: (C)2012,JPO&INPIT |
