| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device with high photoelectric conversion efficiency. <P>SOLUTION: A photoelectric conversion device comprises: a first semiconductor layer having a compound semiconductor containing a group I element, a group III element, and a group VI element; and a second semiconductor layer that is disposed on the first semiconductor layer and forms a pn junction with the first semiconductor layer. The average molar concentration of the group III element in the first semiconductor layer near the second semiconductor layer is smaller than that in the first semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
