发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device according to an embodiment, includes: forming a stack structure by alternately stacking control gate electrodes and interlayer insulating films; forming a through-hole that penetrates through the stack structure in a stacking direction of the control gate electrodes and the interlayer insulating films; forming a first insulating film that covers an inner surface of the through-hole; forming a charge storage layer that covers an inner surface of the first insulating film; forming a second insulating film that covers an inner surface of the charge storage layer; forming a semiconductor layer that covers an inner surface of the second insulating film; and oxidizing an interface between the semiconductor layer and the second insulating film by performing a heat treatment in an atmosphere containing O2 gas at a temperature of 600° C. or lower.
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申请公布号 |
US2012142180(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US201213370532 |
申请日期 |
2012.02.10 |
申请人 |
MATSUSHITA DAISUKE;KATO KOICHI;MITAINI YUICHIRO |
发明人 |
MATSUSHITA DAISUKE;KATO KOICHI;MITAINI YUICHIRO |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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