发明名称 |
Dislocation Engineering Using a Scanned Laser |
摘要 |
A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
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申请公布号 |
US2012138823(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US201213372713 |
申请日期 |
2012.02.14 |
申请人 |
LAI CHUNG WOH;LIU XIAO HI;MADAN ANITA;SCHWARZ KLAUS;SCOTT J. CAMPBELL;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LAI CHUNG WOH;LIU XIAO HI;MADAN ANITA;SCHWARZ KLAUS;SCOTT J. CAMPBELL |
分类号 |
B01J19/12 |
主分类号 |
B01J19/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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