| 摘要 |
The present invention relates to an ion implantation device and to a method for the ion implantation of at least one substrate, wherein, in the ion implantation device, a plasma with an ion density of at least 1010 cm-3, for example of 1010 cm-3 to 1012 cm-3, is generated by a plasma source in a discharge space, wherein the discharge space is bounded in the direction of the substrate to be implanted by a plasma-bounding wall that has spaced-apart through-openings and is at plasma potential or a potential of at most ±100 V, and the pressure in the discharge space is higher than the pressure in the space in which the substrate is located in the ion implantation device; wherein the substrate rests on a substrate support, with its substrate surface facing the plasma-bounding wall; and wherein the substrate and/or the substrate support is/are used as a substrate electrode, which is brought to such a high negative potential with respect to the plasma that ions from the plasma are accelerated in the direction of the substrate and implanted in the substrate. It is the object of the present invention to provide a method and a device for ion implantation that make area-covering and selective ion implantation of a large number of substrates possible with the highest possible effectiveness. The object is achieved by a method and an ion implantation device of the aforementioned generic type in which the at least one substrate and/or the substrate support is/are moved on a substrate transporting device, which runs with respect to the plasma-bounding wall, in a substrate transporting direction towards the discharge space, continuously or discontinuously along the discharge space and past the discharge space, wherein, in terms of being supplied with gas and having gas extracted by suction, the discharge space is separate from the space in which the at least one substrate is located during the ion implantation. |
