SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

摘要

A semiconductor structure and a method for manufacturing the same are provided. A threshold voltage is adjusted by a capacitive coupling between a source or drain region (1012) and a back-gate region (1011, 1011') of the semiconductor structure, so that manufacturing steps are simplified, a degree of integration is improved, and production cost is reduced. In addition, an asymmetric back-gate region (1011) and changing the back-gate region doping type according to a need can further adjust the threshold voltage to improve device performance.